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r5011fnj nch 500v 11a power mosfet datasheet ll outline v dss 500v lpt(s) r ds(on) (max.) 0.52 i d 11a sc-83 p d 50w to-263 ll inner circuit ll features 1) fast reverse recovery time (trr). 2) low on-resistance. 3) fast switching speed. 4) gate-source voltage (v gss ) guaranteed to be 30v. 5) drive circuits can be simple. 6) pb-free lead plating ; rohs compliant ll packaging specifications type packing embossed tape reel size (mm) 330 ll application tape width (mm) 24 switching power supply basic ordering unit (pcs) 1000 taping code tl marking r5011fnj ll absolute maximum ratings (t a = 25c) parameter symbol value unit drain - source voltage v dss 500 v continuous drain current t c = 25c i d *1 11 a t c = 100c i d *1 5.2 a pulsed drain current i d,pulse *2 44 a gate - source voltage v gss 30 v avalanche energy, single pulse e as *3 8.1 mj avalanche energy, repetitive e ar *4 3.5 mj avalanche current i ar *3 5.5 a power dissipation (t c = 25c) p d 50 w junction temperature t j 150 range of storage temperature t stg -55 to +150 reverse diode dv/dt dv/dt 15 v/ns www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 1/13 20150730 - rev.001 downloaded from: http:///
r5011fnj datasheet ll absolute maximum ratings parameter symbol conditions values unit drain - source voltage slope dv/dt v ds = 400v, i d = 11a 50 v/ns t j = 125 ll thermal resistance parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 2.5 /w thermal resistance, junction - ambient r thja - - 80 /w soldering temperature, wavesoldering for 10s t sold - - 265 ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. drain - source breakdown voltage v (br)dss v gs = 0v, i d = 1ma 500 - - v drain - source avalanche breakdown voltage v (br)ds v gs = 0v, i d = 5.5a - 580 - v zero gate voltage drain current i dss v ds = 500v, v gs = 0v a t j = 25c - 1 100 t j = 125c - - 1000 gate - source leakage current i gss v gs = 30v, v ds = 0v - - 100 na gate threshold voltage v gs(th) v ds = 10v, i d = 1ma 2 - 4 v static drain - source on - state resistance r ds(on) *6 v gs = 10v, i d = 5.5a t j = 25c - 0.4 0.52 t j = 125c - 0.85 - gate input resistance r g f = 1mhz, open drain - 8.8 - www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 2/13 20150730 - rev.001 downloaded from: http:///
r5011fnj datasheet ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. transconductance g fs *6 v ds = 10v, i d = 5.5a 4.5 8.0 - s input capacitance c iss v gs = 0v - 950 - pf output capacitance c oss v ds = 25v - 580 - reverse transfer capacitance c rss f = 1mhz - 30 - effective output capacitance, energy related c o(er) v gs = 0v, v ds = 0v to 400v - 40.7 - pf effective output capacitance, time related c o(tr) - 126 - turn - on delay time t d(on) *6 v dd ? 250v, v gs = 10v - 26 - ns rise time t r *6 i d = 5.5a - 28 - turn - off delay time t d(off) *6 r l ? 45.3 - 75 150 fall time t f *6 r g = 10 - 30 60 ll gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. total gate charge q g *6 v dd ? 250v - 30 - nc gate - source charge q gs *6 i d = 11a - 7 - gate - drain charge q gd *6 v gs = 10v - 12 - gate plateau voltage v (plateau) v dd ? 250v, i d = 11a - 5.9 - v *1 limited only by maximum temperature allowed. *2 pw 10s, duty cycle 1% *3 l ? 500h, v dd = 50v, r g = 25, starting t j = 25c *4 l ? 500h, v dd = 50v, r g = 25, starting t j = 25c, f = 10khz *5 reference measurement circuits fig.5-1. *6 pulsed www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 3/13 20150730 - rev.001 downloaded from: http:///
r5011fnj datasheet ll body diode electrical characteristics ( source-drain) (t a = 25c) parameter symbol conditions values unit min. typ. max. inverse diode continuous, forward current i s *1 t c = 25 - - 11 a inverse diode direct current, pulsed i sm *2 - - 44 a forward voltage v sd *6 v gs = 0v, i s = 11a - - 1.5 v reverse recovery time t rr *6 i s = 11a di/dt = 100a/s - 85 - ns reverse recovery charge q rr *6 - 0.26 - c peak reverse recovery current i rrm *6 - 6.3 - a peak rate of fall of reverse recovery current di rr /dt t j = 25 - 710 - a/s ll typical transient thermal characteristics symbol value unit symbol value unit r th1 0.0868 k/w c th1 0.00172 ws/k r th2 0.34 c th2 0.00589 r th3 0.613 c th3 0.18 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 4/13 20150730 - rev.001 downloaded from: http:///
r5011fnj datasheet ll electrical characteristic c urves fig.1 power dissipation derating curve fig.2 maximum safe operating area fig.3 normalized transient thermal resistance vs. pulse width www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 5/13 20150730 - rev.001 downloaded from: http:///
r5011fnj datasheet ll electrical characteristic curves fig. 4 avalanche current vs. inductive load fig.5 avalanc he power losses fig.6 avalanche energy derating curve vs. junction temperature www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 6/13 20150730 - rev.001 downloaded from: http:///
r5011fnj datasheet ll electrical characteristic curves fig. 7 typical output characteristics(i) fig.8 typical ou tput characteristics(ii) fig.9 tj = 150c typical output characteristics (i) fig.10 tj = 150c typical output characteristics (ii) www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 7/13 20150730 - rev.001 downloaded from: http:///
r5011fnj datasheet ll electrical characteristic curves fig. 11 breakdown voltage vs. junction temperature fig.12 typical transfer characteristics fig.13 gate threshold voltage vs. junction temperature fig.14 transconductance vs. drain current www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 8/13 20150730 - rev.001 downloaded from: http:///
r5011fnj datasheet ll electrical characteristic curves fig. 1 5 static drain - source on - state resistance vs. gate source voltage fig.16 static drain - source on - state resistance vs. junction temperature fig.17 static drain - source on - state resistance vs. drain current www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 9/13 20150730 - rev.001 downloaded from: http:///
r5011fnj datasheet ll electrical characteristic curves fig. 1 8 typical capacitance vs. drain - source voltage fig.19 coss stored energy fig.20 switching characteristics fig.21 dynamic inpu t characteristics www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 10/13 20150730 - rev.001 downloaded from: http:///
r5011fnj datasheet ll electrical characteristic curves fig. 22 inverse diode forward current vs. source - drain voltage fig.23 reverse recovery time vs. inverse diode forward current www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 11/13 20150730 - rev.001 downloaded from: http:///
r5011fnj datasheet ll measurement circuits fig.1 -1 switching time measurement circuit fig.1-2 switch ing waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 avalanche measurement circuit fig.3-2 avalan che waveform fig.4-1 dv/dt measurement circuit fig.4-2 dv/dt wave form fig.5-1 di/dt measurement circuit fig.5-2 di/dt wave form www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 12/13 20150730 - rev.001 downloaded from: http:///
r5011fnj datasheet ll dimensions www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 13/13 20150730 - rev.001 downloaded from: http:///
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